High Speed & Power Efficient Inverter using 90nm MTCMOS Technique

A high speed and low power CMOS inverter is designed & simulated in this paper. The critical path consists of PMOS and NMOS. The designed inverter cell offers high speed and low power consumption than the CMOS inverter. A Multi Threshold Complementary Metal Oxide Semiconductor (MTCMOS) technique is used to reduce the leakage current as well as leakage power to achieve better results. MTCMOS is very effective circuit level technique that improves the performance in terms of power by utilizing low and high threshold voltage transistors. Leakage current of CMOS inverter is reduced by 30.77% in case of Low Leakage and 29.48% in case of High speed operation using MTCMOS technique. Leakage power of the MTCMOS inverter therefore reduced as leakage current reduced. The Schematic of developed inverter has been designed using DSCH and its layout has been created using 90nm technology in microwind 3.1 tool.